Vacancy and interstitial oxide ion migration in heavily doped La2−xSrxCoO4±δ
نویسندگان
چکیده
منابع مشابه
The role of vacancy on trapping interstitial O in heavily As-doped Si
We have investigated the interstitial oxygen Oi diffusion in heavily arsenic As -doped Si using first-principles calculations. We show that it is not the As per se but the Si vacancy V that trap Oi to reduce its diffusion. Arsenic actually plays the role of an arbitrator to activate thermal generation of As–V pairs, which in turn trap Oi with a large binding energy of 1.0 eV, in quantitative ag...
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry
سال: 2012
ISSN: 0959-9428,1364-5501
DOI: 10.1039/c2jm30769c